1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors
نویسندگان
چکیده
We performed the 1/f noise measurements on n-channel indium antimonide ~InSb! metal–oxide– semiconductor field-effect transistors ~MOSFETs! biased in linear and saturation regions operated at 77 K. Through the investigation of the dependence of drain voltage noise power spectral density on gate and drain bias, we have estimated the oxide–semiconductor interface trap density as a function of energy. In this analysis, both the noise magnitude and the spectral shape were studied. In this study, the frequency span was performed from 150 Hz to 5 kHz. The noise behavior of the device was modeled using the modified McWhorter Model, originally developed for silicon FETs. The interface trap concentration values computed from the low-frequency noise measurements using the previous model were found to agree closely with InSb/SiO2 interface properties measured by capacitance and conductance methods. © 1999 American Institute of Physics. @S0021-8979~99!05911-3#
منابع مشابه
A Low Temperature Fully Lithographic Process For Metal–Oxide Field-Effect Transistors
We report a low temperature C lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc–indium–oxide (ZIO) semiconductor channel and organic, parylene, dielectric layer. The transistors show a field-effect mobility of 12 0.8 cm V s , on/off ratio of 10 and turn-off voltage of V. This work demonstrates that organic and inorganic layers can...
متن کاملVertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity
Related Articles Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-oninsulator wafers Appl. Phys. Lett. 101, 092110 (2012) High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer Appl. Phys. Lett. 101, 093307 (2012) Influence of dielectric-dependent interfacial widths on device performance in...
متن کامل1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
متن کامل
Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts
Articles you may be interested in Characterization of metal contacts for two-dimensional MoS2 nanoflakes Appl. Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation Appl. Low-frequency noise in a thin active layer-Si:H thin-film transistors
متن کاملRandom telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors
Random telegraph signal ~RTS! amplitude has been studied in a submicron n-channel metal oxide semiconductor field effect transistor as a function of gate voltage. To do so, we have employed a complete simulator of metal oxide semiconductor devices where the effect of a single acceptor trap placed in the silicon oxide was taken into account. The dominant role played by the screening of the charg...
متن کامل